We investigated the temperature dependence (10-180 K) of the photoluminescence (Pi,) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20-30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. (C) 1996 American Institute of Physics.
Brusaferri, L., Sanguinetti, S., Grilli, E., Guzzi, M., Bignazzi, A., Bogani, F., et al. (1996). Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots. APPLIED PHYSICS LETTERS, 69(22), 3354-3356 [10.1063/1.117304].
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1996
Abstract
We investigated the temperature dependence (10-180 K) of the photoluminescence (Pi,) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20-30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. (C) 1996 American Institute of Physics.
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