We present low-temperature resistivity measurements, carried out in the temperature range 100400 mK on uncompensated Si:P samples doped by ion implantation in the just-metallic side of the metal-insulator transition. As the dopant concentration increases the experimental data confirm the presence of the change of sign in the T -dependent correction to the conductivity, with a cusplike behavior of the critical prefactor. However, the sign transition is followed by the turning on of an anomalous temperature contribution. We analyze both features in terms of renormalization of electron-electron interaction effects and show that in Si:P the effective-electron-coupling constant has a sizable enhancement both with doping and temperature.
Sanguinetti, S., Pignatel, G. (1995). Anomalous Conductivity and Electron-coupling-constant Scaling In Metallic Phosphorus-doped Silicon. PHYSICAL REVIEW. B, CONDENSED MATTER, 51(4), 2214-2217 [10.1103/PhysRevB.51.2214].
Anomalous Conductivity and Electron-coupling-constant Scaling In Metallic Phosphorus-doped Silicon
Sanguinetti, S;
1995
Abstract
We present low-temperature resistivity measurements, carried out in the temperature range 100400 mK on uncompensated Si:P samples doped by ion implantation in the just-metallic side of the metal-insulator transition. As the dopant concentration increases the experimental data confirm the presence of the change of sign in the T -dependent correction to the conductivity, with a cusplike behavior of the critical prefactor. However, the sign transition is followed by the turning on of an anomalous temperature contribution. We analyze both features in terms of renormalization of electron-electron interaction effects and show that in Si:P the effective-electron-coupling constant has a sizable enhancement both with doping and temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.