We present low-temperature resistivity measurements, carried out in the temperature range 100400 mK on uncompensated Si:P samples doped by ion implantation in the just-metallic side of the metal-insulator transition. As the dopant concentration increases the experimental data confirm the presence of the change of sign in the T -dependent correction to the conductivity, with a cusplike behavior of the critical prefactor. However, the sign transition is followed by the turning on of an anomalous temperature contribution. We analyze both features in terms of renormalization of electron-electron interaction effects and show that in Si:P the effective-electron-coupling constant has a sizable enhancement both with doping and temperature.

Sanguinetti, S., Pignatel, G. (1995). Anomalous Conductivity and Electron-coupling-constant Scaling In Metallic Phosphorus-doped Silicon. PHYSICAL REVIEW. B, CONDENSED MATTER, 51(4), 2214-2217 [10.1103/PhysRevB.51.2214].

Anomalous Conductivity and Electron-coupling-constant Scaling In Metallic Phosphorus-doped Silicon

Sanguinetti, S;
1995

Abstract

We present low-temperature resistivity measurements, carried out in the temperature range 100400 mK on uncompensated Si:P samples doped by ion implantation in the just-metallic side of the metal-insulator transition. As the dopant concentration increases the experimental data confirm the presence of the change of sign in the T -dependent correction to the conductivity, with a cusplike behavior of the critical prefactor. However, the sign transition is followed by the turning on of an anomalous temperature contribution. We analyze both features in terms of renormalization of electron-electron interaction effects and show that in Si:P the effective-electron-coupling constant has a sizable enhancement both with doping and temperature.
Articolo in rivista - Articolo scientifico
Semiconductors; Silicon; Metal-Insulator Transition
English
1995
51
4
2214
2217
none
Sanguinetti, S., Pignatel, G. (1995). Anomalous Conductivity and Electron-coupling-constant Scaling In Metallic Phosphorus-doped Silicon. PHYSICAL REVIEW. B, CONDENSED MATTER, 51(4), 2214-2217 [10.1103/PhysRevB.51.2214].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/33485
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