The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.
Bergamaschini, R., Brehm, M., Grydlik, M., Fromherz, T., Bauer, G., Montalenti, F. (2011). Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001). NANOTECHNOLOGY, 22(28), 285704 [10.1088/0957-4484/22/28/285704].
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)
BERGAMASCHINI, ROBERTO;MONTALENTI, FRANCESCO CIMBRO MATTIA
2011
Abstract
The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.
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