Morphological analysis of epitaxially grown self-assembled InAs quantum dots grown on GaAs (311)A substrate shows a markedly anisotropic and faceted shape. The islands, triangular pyramids with an elongated axis, are preferentially aligned along the [233] direction. Photoluminescence emission at 10 K is 20% polarised along the same direction. Luminescence linewidth is reduced with increasing temperature from 85 meV (at 10 K) up to 52 meV (at 100 K) with only minor reduction of the emission intensity. © 1998 Elsevier Science B.V. All rights reserved.
Sanguinetti, S., Fortina, S., Grilli, E., Guzzi, M., Henini, M., Upward, M., et al. (1998). Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs. MICROELECTRONIC ENGINEERING, 43-44, 45-49 [10.1016/S0167-9317(98)00196-8].
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1998
Abstract
Morphological analysis of epitaxially grown self-assembled InAs quantum dots grown on GaAs (311)A substrate shows a markedly anisotropic and faceted shape. The islands, triangular pyramids with an elongated axis, are preferentially aligned along the [233] direction. Photoluminescence emission at 10 K is 20% polarised along the same direction. Luminescence linewidth is reduced with increasing temperature from 85 meV (at 10 K) up to 52 meV (at 100 K) with only minor reduction of the emission intensity. © 1998 Elsevier Science B.V. All rights reserved.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
