The results of a systematic photo and cathodo-luminescence analysis of a large matrix of CZ silicon samples on which different nucleation and oxide precipitation anneals have been carried out, are reported and correlated with the results of infrared and TEM analysis on the same sets of samples. The results obtained show that the precipitates are correlated with centres, which are responsible of light emission at 0.8 eV and 0.87 eV. Analysis on intentionally dislocated CZ and FZ samples supported these results and confirm that D3 and D4 bands are intrinsic to dislocations.
Pizzini, S., Binetti, S., LE DONNE, A., Leoni, E., Acciarri, M., Salviati, G., et al. (2001). Beam injection studies of dislocations and oxygen precipitates in semiconductor silicon. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 78-79, 57-64 [10.4028/www.scientific.net/SSP.78-79.57].
Beam injection studies of dislocations and oxygen precipitates in semiconductor silicon
Pizzini, S;BINETTI, SIMONA OLGA;LE DONNE, ALESSIA;ACCIARRI, MAURIZIO FILIPPO;
2001
Abstract
The results of a systematic photo and cathodo-luminescence analysis of a large matrix of CZ silicon samples on which different nucleation and oxide precipitation anneals have been carried out, are reported and correlated with the results of infrared and TEM analysis on the same sets of samples. The results obtained show that the precipitates are correlated with centres, which are responsible of light emission at 0.8 eV and 0.87 eV. Analysis on intentionally dislocated CZ and FZ samples supported these results and confirm that D3 and D4 bands are intrinsic to dislocations.
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