P-doped Si nanocrystals (radius ≤2 nm) were synthesized by depositing an ultrathin (0.3 nm) P- SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P- SiO2 layer.

Perego, M., Bonafos, C., Fanciulli, M. (2009). Phosphorus doping of ultra-small silicon nanocrystals. NANOTECHNOLOGY, 21(2), 025602 [10.1088/0957-4484/21/2/025602].

Phosphorus doping of ultra-small silicon nanocrystals

FANCIULLI, MARCO
2009

Abstract

P-doped Si nanocrystals (radius ≤2 nm) were synthesized by depositing an ultrathin (0.3 nm) P- SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P- SiO2 layer.
Articolo in rivista - Articolo scientifico
Silicon nanocrystals, doping
English
3-dic-2009
21
2
025602
none
Perego, M., Bonafos, C., Fanciulli, M. (2009). Phosphorus doping of ultra-small silicon nanocrystals. NANOTECHNOLOGY, 21(2), 025602 [10.1088/0957-4484/21/2/025602].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/21764
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