We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to -type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si. © 2011 American Institute of Physics.
Gatti, E., Grilli, E., Guzzi, M., Chrastina, D., Isella, D., von Känel, H. (2011). Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers. APPLIED PHYSICS LETTERS, 98(3), 031106 [10.1063/1.3541782].
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers
GATTI, ELEONORA;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2011
Abstract
We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to -type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si. © 2011 American Institute of Physics.
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