The in situ film thickness during vacuum deposition of organic-molecular semiconductors using quartz microbalance was analyzed. Atomic force microscopy (AFM) was used to evaluate total film volume on substrate. H2-TPP films completely covered substrate surface for relatively high thickness. The proportional error in evaluation of film thickness was observed to depend only on film density below critical value. The results show that film density of 4T films on silica were placed at equivalent positions with respect to material source.
Campione, M., Cartotti, M., Pinotti, E., Sassella, A., Borghesi, A. (2004). Thickness measurements by quartz microbalance during thin-film growth by organic-molecular-beam deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 22(3), 482-486 [10.1116/1.1690249].
Thickness measurements by quartz microbalance during thin-film growth by organic-molecular-beam deposition
CAMPIONE, MARCELLO
;SASSELLA, ADELE;BORGHESI, ALESSANDRO
2004
Abstract
The in situ film thickness during vacuum deposition of organic-molecular semiconductors using quartz microbalance was analyzed. Atomic force microscopy (AFM) was used to evaluate total film volume on substrate. H2-TPP films completely covered substrate surface for relatively high thickness. The proportional error in evaluation of film thickness was observed to depend only on film density below critical value. The results show that film density of 4T films on silica were placed at equivalent positions with respect to material source.
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