The nature of the defects present at the Ge/oxide interface has been investigated by electrically detected magnetic resonance spectroscopy. In vacuo atomic oxygen exposure has been exploited to generate germanium oxide with variable composition according to the oxidation temperature. Two different kinds of interfacial defects have been identified, which correspond to the Ge dangling bonds and to an oxygen-related defect.
Baldovino, S., Molle, A., Fanciulli, M. (2008). Evidence of dangling bond electrical activity at the Ge/oxide interface. APPLIED PHYSICS LETTERS, 93(24), 242105-1-242105-3 [10.1063/1.3050451].
Evidence of dangling bond electrical activity at the Ge/oxide interface
FANCIULLI, MARCO
2008
Abstract
The nature of the defects present at the Ge/oxide interface has been investigated by electrically detected magnetic resonance spectroscopy. In vacuo atomic oxygen exposure has been exploited to generate germanium oxide with variable composition according to the oxidation temperature. Two different kinds of interfacial defects have been identified, which correspond to the Ge dangling bonds and to an oxygen-related defect.File in questo prodotto:
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