The nature of the defects present at the Ge/oxide interface has been investigated by electrically detected magnetic resonance spectroscopy. In vacuo atomic oxygen exposure has been exploited to generate germanium oxide with variable composition according to the oxidation temperature. Two different kinds of interfacial defects have been identified, which correspond to the Ge dangling bonds and to an oxygen-related defect.

Baldovino, S., Molle, A., Fanciulli, M. (2008). Evidence of dangling bond electrical activity at the Ge/oxide interface. APPLIED PHYSICS LETTERS, 93(24), 242105-1-242105-3 [10.1063/1.3050451].

Evidence of dangling bond electrical activity at the Ge/oxide interface

FANCIULLI, MARCO
2008

Abstract

The nature of the defects present at the Ge/oxide interface has been investigated by electrically detected magnetic resonance spectroscopy. In vacuo atomic oxygen exposure has been exploited to generate germanium oxide with variable composition according to the oxidation temperature. Two different kinds of interfacial defects have been identified, which correspond to the Ge dangling bonds and to an oxygen-related defect.
Articolo in rivista - Articolo scientifico
Semiconductors, Interfaces, Spin Resonance Ge/GeO2 interface, defects, magneti resonance
English
15-dic-2008
93
24
242105-1
242105-3
242105
none
Baldovino, S., Molle, A., Fanciulli, M. (2008). Evidence of dangling bond electrical activity at the Ge/oxide interface. APPLIED PHYSICS LETTERS, 93(24), 242105-1-242105-3 [10.1063/1.3050451].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/13410
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