Our work, focused on the heteroepitaxial Ge/Si (001) system shows that patterned Si substrates in appropriate pillar arrays, featuring micrometric dimensions within the common deep-etching capabilities and array size suitable for several applications (up to few hundreds microns), do provide exceptional compliance to the thermal strain of a continuous Ge film deposited on top. Micro-Raman and XRD measurements on the Ge suspended layer, as obtained by Low Energy Plasma Enhanced Chemical Vapor Deposition, confirm the theoretical predictions. Actually, the sharp onset with pillar aspect ratio of such an effect is demonstrated to be triggered by the free rotation of the pillars, as induced by the thermal contraction of the film. The strain relaxation is deeply analyzed both by FEM simulations and experimental XRD results, showing a very good quantitative agreement. Our findings have far reaching consequences beyond the crystalline heteroepitaxial systems, whenever a film of any microstructure, or composition, is deposited in suspended patches on suitable pillar arrays.

Marzegalli, A., Cortinovis, A., BASSO BASSET, F., Bonera, E., Pezzoli, F., Scaccabarozzi, A., et al. (2016). An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture. Intervento presentato a: 2016 E-MRS Spring Meeting Simposium K, Lille.

An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture

MARZEGALLI, ANNA;BASSO BASSET, FRANCESCO;BONERA, EMILIANO;PEZZOLI, FABIO;SCACCABAROZZI, ANDREA;MIGLIO, LEONIDA
2016

Abstract

Our work, focused on the heteroepitaxial Ge/Si (001) system shows that patterned Si substrates in appropriate pillar arrays, featuring micrometric dimensions within the common deep-etching capabilities and array size suitable for several applications (up to few hundreds microns), do provide exceptional compliance to the thermal strain of a continuous Ge film deposited on top. Micro-Raman and XRD measurements on the Ge suspended layer, as obtained by Low Energy Plasma Enhanced Chemical Vapor Deposition, confirm the theoretical predictions. Actually, the sharp onset with pillar aspect ratio of such an effect is demonstrated to be triggered by the free rotation of the pillars, as induced by the thermal contraction of the film. The strain relaxation is deeply analyzed both by FEM simulations and experimental XRD results, showing a very good quantitative agreement. Our findings have far reaching consequences beyond the crystalline heteroepitaxial systems, whenever a film of any microstructure, or composition, is deposited in suspended patches on suitable pillar arrays.
abstract + slide
Epitaxial growth, Patterning, strain vs. temperature, germanium
English
2016 E-MRS Spring Meeting Simposium K
2016
2016
none
Marzegalli, A., Cortinovis, A., BASSO BASSET, F., Bonera, E., Pezzoli, F., Scaccabarozzi, A., et al. (2016). An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture. Intervento presentato a: 2016 E-MRS Spring Meeting Simposium K, Lille.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/131860
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