We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover, a new emission at 0.975 eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 10(4) cm(-2).
Li, D., Yang, D., Leoni, E., Binetti, S., Pizzini, S. (2004). Photoluminescence of dislocations in nitrogen doped Czochralski silicon. CHINESE PHYSICS LETTERS, 21(11), 2242-2244 [10.1088/0256-307X/21/11/046].
Photoluminescence of dislocations in nitrogen doped Czochralski silicon
BINETTI, SIMONA OLGA;PIZZINI, SERGIO
2004
Abstract
We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover, a new emission at 0.975 eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 10(4) cm(-2).
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