BONERA, EMILIANO

BONERA, EMILIANO  

DIPARTIMENTO DI SCIENZA DEI MATERIALI  

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Risultati 1 - 20 di 100 (tempo di esecuzione: 0.024 secondi).
Titolo Tipologia Data di pubblicazione Autori File
Near-field optical imaging of electromigration damages in passivated metal stripes 02 - Intervento a convegno 1999 Bonera, EBorghesi, A +
EPR and UV-Raman study of BPSG thin films: structure and defects 01 - Articolo su rivista 2001 FANCIULLI, MARCOBONERA, EMILIANO +
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon 01 - Articolo su rivista 2002 BONERA, EMILIANOFANCIULLI, MARCO +
Crystal defects and junction properties in the evolution of device fabrication technology 01 - Articolo su rivista 2002 BONERA, EMILIANO +
Development of a combined confocal and scanning near-field Raman microscope for deep UV laser excitation 01 - Articolo su rivista 2002 BONERA, EMILIANO +
Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage 01 - Articolo su rivista 2002 BONERA, EMILIANOFANCIULLI, MARCO +
Renishaw Application Note : Imaging of silicon stress in microelectronics using Raman spectroscopy 99 - Altro 2003 BONERA, EMILIANO
Defect generation and suppression in device processes using a shallow trench isolation scheme 02 - Intervento a convegno 2003 BONERA, EMILIANO +
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies 01 - Articolo su rivista 2003 BONERA, EMILIANOFANCIULLI, MARCO +
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 01 - Articolo su rivista 2003 BONERA, EMILIANOFANCIULLI, MARCO +
Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects 01 - Articolo su rivista 2003 BONERA, EMILIANOFANCIULLI, MARCO +
Combining high resolution and tensorial analysis in Raman stress measurements of silicon 01 - Articolo su rivista 2003 BONERA, EMILIANOFANCIULLI, MARCO +
Atomic-layer deposition of Lu2O3 01 - Articolo su rivista 2004 BONERA, EMILIANOFANCIULLI, MARCO +
Crystal and molecular structure of [(eta(5)-C5H4SiMe3)(2)LuCl](2): A precursor for the production of Lu2O3 films 01 - Articolo su rivista 2004 BONERA, EMILIANOFANCIULLI, MARCO +
Energy-band diagram of metal/Lu2O3/silicon structures 01 - Articolo su rivista 2004 BONERA, EMILIANOFANCIULLI, MARCO +
Resonant Raman microscopy of stress in silicon-based microelectronics 03 - Contributo in libro 2005 Bonera, EFanciulli, M
Raman spectroscopy of strain in subwavelength microelectronic devices 01 - Articolo su rivista 2005 BONERA, EMILIANOFANCIULLI, MARCO +
A full self-consistent methodology for strain-induced effects characterization in silicon devices 02 - Intervento a convegno 2005 BONERA, EMILIANO +
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 01 - Articolo su rivista 2005 BONERA, EMILIANOFANCIULLI, MARCO +
Raman stress maps from finite-element models of silicon structures 01 - Articolo su rivista 2006 BONERA, EMILIANOFANCIULLI, MARCO +