Sfoglia per Autore
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates
2023 Tuktamyshev, A; Cesura, F; Vichi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Carminati, G; Lambardi, D; Pedrini, J; Vitiello, E; Pezzoli, F; Bietti, S; Sanguinetti, S
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Chrastina, D; Tsukamoto, S; Sanguinetti, S
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate
2022 Barbiero, A; Tuktamyshev, A; Pirard, G; Huwer, J; M??ller, T; Stevenson, R; Bietti, S; Vichi, S; Fedorov, A; Bester, G; Sanguinetti, S; Shields, A
Optically controlled dual-band quantum dot infrared photodetector
2022 Vichi, S; Bietti, S; Basso Basset, F; Tuktamyshev, A; Fedorov, A; Sanguinetti, S
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
2022 Anzi, L; Tuktamyshev, A; Fedorov, A; Zurutuza, A; Sanguinetti, S; Sordan, R
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications
2021 Tuktamyshev, A
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Tambone, R; Tsukamoto, S; Sanguinetti, S
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Zeuner, K; Jöns, K; Chrastina, D; Tsukamoto, S; Zwiller, V; Gurioli, M; Sanguinetti, S
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
2020 Bietti, S; Basset, F; Tuktamyshev, A; Bonera, E; Fedorov, A; Sanguinetti, S
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
2020 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Bergamaschini, R; Montalenti, F; Sanguinetti, S
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
2019 Basset, F; Bietti, S; Tuktamyshev, A; Vichi, S; Bonera, E; Sanguinetti, S
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
2019 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Sanguinetti, S
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
2018 Yesin, M; Nikiforov, A; Timofeev, V; Mashanov, V; Tuktamyshev, A; Loshkarev, I; Pchelyakov, O
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
2018 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Mashanov, V; Yesin, M; Bloshkin, A
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures
2018 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Bloshkin, A; Gutakovskii, A
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands
2018 Esin, M; Nikiforov, A; Timofeev, V; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Deryabin, A; Pchelyakov, O
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
2017 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Bloshkin, A; Mashanov, V; Teys, S; Loshkarev, I; Baidakova, N
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
2017 Timofeev, V; Nikiforov, A; Kokhanenko, A; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Novikov, V
The ordering of Ge islands on a stepped Si(100) surface
2017 Yesin, M; Timofeev, V; Tuktamyshev, A; Nikiforov, A; Loshkarev, I
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