Sfoglia per Autore
Mostrati risultati da 1 a 8 di 8
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer
2012 Baldovino, S; Lamperti, A; Fanciulli, M; Molle, A
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires
2011 Fanciulli, M; Molle, A; Baldovino, S; Vellei, A
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition
2011 Lamperti, A; Baldovino, S; Molle, A; Fanciulli, M
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface
2011 Molle, A; Baldovino, S; Fanciulli, M
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires
2011 Fanciulli, M; Vellei, A; Canevali, C; Baldovino, S; Pennelli, G; Longo, M
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics
2011 Schamm Chardon, S; Coulon, P; Lamagna, L; Wiemer, C; Baldovino, S; Fanciulli, M
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors
2010 Molle, A; Baldovino, S; Spiga, S; Fanciulli, M
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface
2010 Baldovino, S; Molle, A; Fanciulli, M
Mostrati risultati da 1 a 8 di 8
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